• September 28 – October 1, 2014
  • Coronado Island Marriott Resort & Spa, San Diego, Coronado Island, CA, USA
  • Come join Technical Session #10 “Device Characterization & Parameter Extraction”,
  • Wednesday Oct. 1st, 10:20 AM, at Coronado Ballroom D, to see and discuss:
  • See you in sunny San Diego, Coronado Island Marriott Resort & Spa!
Invited Paper:

“On-Wafer Small-Signal and Large-Signal Measurements up to Sub-THz Frequencies”

10:20 – 11:10 AM, October 1

On-Wafer Small-Signal and Large-Signal Measurements up to Sub-THz Frequencies.

Authors:

Viktor Krozer, Ralf Doerner, Franz-Josef Schmückle, Nils Weimann, Wolfgang Heinrich, Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik Berlin, Germany.

Andrej Rumiantsev, MPI Corporation, Chu-Pei City, Hsinchu County, Taiwan

Marco Lisker, Bernd Tillack, Innovations for High Performance Microelectronics (IHP) Leibniz-Institut für innovative Mikroelektronik Frankfurt (Oder), Germany.

Abstract:

Recent advances in MMIC technology have opened the possibilities for circuit operation in the THz range. There are numerous examples of BiCMOS and III-V compound device technologies with demonstrated performance beyond 600 GHz. Characterization of such MMIC are predominantly performed on-wafer in a planar environment. However, on-wafer characterization facilities do not fully keep pace with MMIC development in terms of frequency and power. The paper discusses issues involved in on-wafer calibration at mm-wave frequencies, which is the basis for accurate measurements and characterization of active and passive device. Subsequently, the paper discusses mm-wave interconnect characterization. Low- loss interconnects are important for mm-wave MMIC, especially in case of heterogeneous integration. Finally, a novel heterogeneous integration approach of bipolar technologies, using both BiCMOS and InP DHBT processes is presented. This approach heavily relies on low-loss interconnects and accurate device modelling. It will be shown that accurate large-signal models can be efficiently extracted from well-calibrated on-wafer multi-bias small-signal measurements, but verification is difficult due to calibration difficulties at mm-wave frequencies.

Technical Paper:

“Temperature Impact on the In-Situ S-Parameter Calibration in Advanced SiGe Technologies”

11:10 – 11:35 AM, October 1

Temperature Impact on the In-Situ S-Parameter Calibration in Advanced SiGe Technologies

Authors:

Andrej Rumiantsev, MPI Corporation, Chu-Pei City, Hsinchu County, Taiwan

Marco Lisker, Bernd Tillack, Innovations for High Performance Microelectronics (IHP) Leibniz-Institut für innovative Mikroelektronik Frankfurt (Oder), Germany.

Ralf Doerner, Ferdinand-Braun-Institut (FBH), Leibniz-Institut fuer Hoechstfrequenztechnik, Berlin, Germany

Falk Korndoerfer, Innovations for High Performance Microelectronics (IHP) Leibniz-Institut fuer innovative Mikroelektronik, Frankfurt (Oder), Germany.

Abstract:

This paper analyzes the in-situ S-parameter multiline TRL and the transfer TMR calibration methods for the sensitivity to the thermal variation of electrical characteristics of calibration standards. The standards were realized in IHP’s SG13 130nm SiGe:C BiCMOS process. The measurement experiment was performed for the frequency range up to 110 GHz. We demonstrate that the calibration error caused by thermal instability of electrical characteristic of standards is in order of magnitude of the system drift error and, thus, negligible.