技術文件庫

MPI-AST-V20-001

Trendsetting Methodologies for Wafer-Level RF Measurements
Application Note
This application note discusses unique integrated solutions developed by MPI Corporation and Rohde & Schwarz to satisfy the most challenging wafer-level measurement requirements of modern RF devices and integrated circuits.

MPI-AST-V20-001

Simplifying the Art of Terahertz Measurements
Application Note
This application note discusses unique solutions developed by MPI Corporation to address challenges of wafer-level calibration and measurements at THz frequencies.

MPI-AST-V20-001

TITAN™ RF Probe Quick Setup Guide
Quick How-To Reference
This quick reference discusses such topics as how to planarize, clean and use TITAN™ Probes properly to ensure consistent measurement and calibration results over longest period of time.

MPI-AST-V20-001

MPI TITAN™ Probe Calibration for WinCal XE Users
Quick How-To Reference
This quick reference provides the step-by-step guidance for WinCal XE users on how to setup successful calibration of TITAN™ probes and AC-x family of calibration substrates from MPI Corporation.

MPI-AST-V20-001

Defining Cal Kit for Keysight PNA and TITAN™ Probes
Quick How-To Reference
This quick reference presents the procedure of how to define a custom Cal Kit for Keysight PNA family of vector network analyzers and TITAN™ Probes. The example is given for the T26A-GSG0150 TITAN™ Probes, AC2 calibration substrate and 20 GHz PNA-L VNA model.

MPI-AST-V20-001

C-V Measurements at the Wafer-Level
Quick How-To Reference
This quick reference presents MPI solutions for accurate CV-measurements, system calibration to the probe tip and calibration verification.

MPI-AST-V20-001

On-Wafer Small-Signal and Large-Signal Measurements up to Sub-THz Frequencies
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 28 Sep – 01 Oct 2014, Coronado, CA, USA
Conference Paper
The paper discusses issues involved in on-wafer calibration at mm-wave frequencies, which is the basis for accurate measurements and characterization of active and passive device.

MPI-AST-V20-001

Temperature Impact on the In-Situ S-Parameter Calibration in Advanced SiGe Technologies
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 28 Sep – 01 Oct 2014, Coronado, CA, USA
Conference Paper
This paper analyzes the in-situ S-parameter multiline TRL and the transfer TMR calibration methods for the sensitivity to the thermal variation of electrical characteristics of calibration standards.

MPI-AST-V20-001

On-Wafer S-Parameters & Uncertainties
The NIST-ARFTG Short Course on Microwave Measurements, ARFTG-86th, Dec 1-2, 2015, Atlanta, GA, USA
Presentation from MPI Corporation
This presentation starts with the basics of S-parameter measurement and calibration techniques at wafer-level. Special attention is paid to how to choose the right calibration method and to the definition of the calibration reference impedance of a calibrated system. Finally, the potential sources of calibration residual errors are analyzed and practical examples are given on how to minimize the impact of such errors on the measurement accuracy of a calibrated probe system.

MPI-AST-V20-001

mm-Wave Calibration and De-Embedding
The 11th International Summer School on RF MEMS and RF Microsystems, IHP Microelectronics, June 22-26, 2015, Frankfurt (O), Germany
Presentation from MPI Corporation
This presentation discusses the basics of the wafer-level calibration and de-embedding and focuses on the best practices.

MPI-AST-V20-001

Основы СВЧ измерений на подложках (in Russian)
Rohde & Schwarz Seminar, Rohde & Schwarz RUS, Fall 2015, Moscow, Russian Federation
Presentation from MPI Corporation
This presentation discusses the basics of the wafer-level measurements at RF and mm-wave frequencies.

Особенности измерений на полупроводниковых подложках и калибровочных методов в СВЧ диапазоне, основанных на планарных линиях (in Russian)
Rohde & Schwarz, CST and MPI Corporation Seminar “Measurement meets simulation”, 12-13 April, 2016, Moscow, Russian Federation
Presentation from MPI Corporation
This presentation discusses specifics of the wafer-level calibration and calibration residual errors at mm-wafer frequency range.