Technical Library

Groundbreaking Achievements in Over-Temperature mmW Broadband Characterization of Semiconductor Devices

Application Note

In this technical paper, we delve into the challenges of over-temperature characterization and present innovative solutions that address these challenges.

Featuring the T110LL Low-Loss 110 GHz TITAN™ Probes for Advanced Load Pull Applications

Application Note

This application note presents the unique Low-Loss probes developed by MPI Corporation to address the challenges of Load-pull measurements.

RF Probe Comparison for Characterizing Passive and Active Devices

Application Note

This application note discusses the probe comparison measurement methods and results for both passive and active devices.

Your recipe of on-wafer calibration for accurate mm-wave characterisation of advanced silicon devices

ARMMS RF & MICROWAVE SOCIETY CONFERENCE, Nov 18-19, 2019, Oxford, UK

Presentation from MPI Corporation

This presentation discusses solutions for both metrology-grade and production-suitable calibration methods and will share some experimental results and practical recommendations.

Auto-Measurement by MPI Probe Station with SENTIO® Software Suite in NoiseProPlus™

Application Note

NoiseProPlus™ can control MPI semi-auto probe station (e.g. TS3000-SE) with SENTIO® Software suite V2.8.0 to measure the 1/f noise automatically.

Auto-Measurement by MPI Probe Station with SENTIO® Software Suite in BSIMProPlus™

Application Note

BSIMProPlus™ can control MPI semi-auto probe station (e.g. TS3000-SE) with SENTIO® software suite V2.8.0 to measure device IV and CV curves automatically.

Improving Wafer-Level Calibration Consistency with TMRR Calibration Method

ARFTG-91st, June 15, 2018, Philadelphia, PA, USA

Conference Paper

This paper presents the new calibration algorithm TMRR (Thru-Match-Reflect-Reflect), the extension of the Thru-Match-Reflect (TMR) method with one extra Reflect standard.

Trendsetting Methodologies for Wafer-Level RF Measurements

Application Note

This application note discusses unique integrated solutions developed by MPI Corporation and Rohde & Schwarz to satisfy the most challenging wafer-level measurement requirements of modern RF devices and integrated circuits.

Simplifying the Art of Terahertz Measurements

Application Note

This application note discusses unique solutions developed by MPI Corporation to address challenges of wafer-level calibration and measurements at THz frequencies.

TITAN™ RF Probe Quick Setup Guide

Quick How-To Reference

This quick reference discusses such topics as how to planarize, clean and use TITAN™ Probes properly to ensure consistent measurement and calibration results over longest period of time.

Defining Cal Kit for Keysight PNA and TITAN™ Probes

Quick How-To Reference

This quick reference presents the procedure of how to define a custom Cal Kit for Keysight PNA family of vector network analyzers and TITAN™ Probes. The example is given for the T26A-GSG0150 TITAN™ Probes, AC2 calibration substrate and 20 GHz PNA-L VNA model.

C-V Measurements at the Wafer-Level

Quick How-To Reference

This quick reference presents MPI solutions for accurate CV-measurements, system calibration to the probe tip and calibration verification.

On-Wafer Small-Signal and Large-Signal Measurements up to Sub-THz Frequencies

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 28 Sep – 01 Oct 2014, Coronado, CA, USA

Conference Paper

The paper discusses issues involved in on-wafer calibration at mm-wave frequencies, which is the basis for accurate measurements and characterization of active and passive device.

Temperature Impact on the In-Situ S-Parameter Calibration in Advanced SiGe Technologies

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 28 Sep – 01 Oct 2014, Coronado, CA, USA

Conference Paper

This paper analyzes the in-situ S-parameter multiline TRL and the transfer TMR calibration methods for the sensitivity to the thermal variation of electrical characteristics of calibration standards

On-Wafer S-Parameters & Uncertainties

The NIST-ARFTG Short Course on Microwave Measurements, ARFTG-86th, Dec 1-2, 2015, Atlanta, GA, USA

Presentation from MPI Corporation

This presentation starts with the basics of S-parameter measurement and calibration techniques at wafer-level. Special attention is paid to how to choose the right calibration method and to the definition of the calibration reference impedance of a calibrated system. Finally, the potential sources of calibration residual errors are analyzed and practical examples are given on how to minimize the impact of such errors on the measurement accuracy of a calibrated probe system.

mm-Wave Calibration and De-Embedding

The 11th International Summer School on RF MEMS and RF Microsystems, IHP Microelectronics, June 22-26, 2015, Frankfurt (O), Germany

Presentation from MPI Corporation

This presentation discusses the basics of the wafer-level calibration and de-embedding and focuses on the best practices.

Основы СВЧ измерений на подложках (in Russian)

Rohde & Schwarz Seminar, Rohde & Schwarz RUS, Fall 2015, Moscow, Russian Federation

Presentation from MPI Corporation

This presentation discusses the basics of the wafer-level measurements at RF and mm-wave frequencies.

Особенности измерений на полупроводниковых подложках и калибровочных методов в СВЧ диапазоне, основанных на планарных линиях (in Russian)

Rohde & Schwarz, CST and MPI Corporation Seminar “Measurement meets simulation”, 12-13 April, 2016, Moscow, Russian Federation

Presentation from MPI Corporation

This presentation discusses specifics of the wafer-level calibration and calibration residual errors at mm-wafer frequency range.